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Grain Growth Processes during Transient Annealing ofAs-Implanted, Polycrystalline-Silicon Films

Published online by Cambridge University Press:  25 February 2011

S.J. Krause ,
S.R. Wilson ,
W.M. Paulson  and
R.B. Gregory
S.J. Krause
Affiliation:
*Dept. of Mechancial and Aerospace Engineering, Arizona State University, Tempe, AZ 85287
S.R. Wilson
Affiliation:
Semiconductor Research and Development Laboratory, Motorola, Inc., 5005 F. McDowell Road, Phoenix, AZ 85008
W.M. Paulson
Affiliation:
Semiconductor Research and Development Laboratory, Motorola, Inc., 5005 F. McDowell Road, Phoenix, AZ 85008
R.B. Gregory
Affiliation:
Semiconductor Research and Development Laboratory, Motorola, Inc., 5005 F. McDowell Road, Phoenix, AZ 85008
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Abstract

Polycrystalline silicon films of 300 nm thickness were deposited on oxidizedwafer surfaces, implanted with As, and annealed on a Varian IA 200 rapidthermal annealer. Transmission electron microscopy was used to studythrough-thickness and cross sectional views of grain size and morphology ofas-deposited and of transient annealed films. A bimoda] distribution ofgrain sizes was present in as-deposited polycrystalline silicon films. Thefirst population was due to columnar growth of some grains to a finalaverage diameter of 20 rm. The second population of small equiaxed grains of5 nm average diameter were formed early in the deposition process. Duringtransient annealing grains in the first population grew rapidly up to 280-nmequiaxed grains. After this the growth rate decreased due to the grain sizereaching the thickness of the film. Grains in the second population grewrapidly up to a size of 150 nm, after which the growth rate was lowered dueto grains impinging upon one another. The grain growth processes for bothpopulations have been described with a modified model for interfaciallydriven grain growth. This model accounts for diffusion and grain growthwhich occur with rapidly rising and falling temperatures during shortannealing times characteristic of transient annealing processes.

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References

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