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Giant Anisotropy of Conductivity in Hydrogenated Nanocrystalline Silicon Thin Films

Published online by Cambridge University Press:  09 August 2011

A. B. Pevtsov ,
N. A. Feoktistov  and
V. G. Golubev
A. B. Pevtsov
Affiliation:
A.F. loffe Physico-Technical Institute, 194021 St. Petersburg, Russia, alex@pevtsov.spb.su
N. A. Feoktistov
Affiliation:
A.F. loffe Physico-Technical Institute, 194021 St. Petersburg, Russia, alex@pevtsov.spb.su
V. G. Golubev
Affiliation:
A.F. loffe Physico-Technical Institute, 194021 St. Petersburg, Russia, alex@pevtsov.spb.su
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Abstract

Thin (<1000 Å) hydrogenated nanocrystalline silicon films are widely used in solar cells, light emitting diodes, and spatial light modulators. In this work the conductivity of doped and undoped amorphous-nanocrystalline silicon thin films is studied as a function of film thickness: a giant anisotropy of conductivity is established. The longitudinal conductivity decreases dramatically (by a factor of 109 − 1010) as the layer thickness is reduced from 1500 Å to 200 Å, while the transverse conductivity remains close to that of a doped a- Si:H. The data obtained are interpreted in terms of the percolation theory.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 536: Symposium F – Microcrystalline & Nanocrystalline Semiconductors - 1998 , 1998 , 275
Copyright
Copyright © Materials Research Society 1999

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