Hostname: page-component-54dcc4c588-sdd8f Total loading time: 0 Render date: 2025-10-13T13:13:04.157Z Has data issue: false hasContentIssue false
  • English
  • Français

Ge/Pd and Si/Pd/Ge/Pd Non-Alloyed Ohmic Contacts to InP Examined by Backside Secondary Ion Mass Spectrometry

Published online by Cambridge University Press:  25 February 2011

S. A. Schwarz ,
T. Sands ,
R. Bhat ,
M. Koza ,
M. A. A. Pudensi ,
L. C. Wang  and
S. S. Lau
S. A. Schwarz
Affiliation:
Bellcore, Red Bank, NJ 07701–7040
T. Sands
Affiliation:
Bellcore, Red Bank, NJ 07701–7040
R. Bhat
Affiliation:
Bellcore, Red Bank, NJ 07701–7040
M. Koza
Affiliation:
Bellcore, Red Bank, NJ 07701–7040
M. A. A. Pudensi
Affiliation:
IFGW-UNICAMP, 13081 Campinas, Brazil
L. C. Wang
Affiliation:
Dept. of Elec. Eng., Texas A&M Univ., College Station, TX 77843
S. S. Lau
Affiliation:
Dept. of Elec, and Comp. Eng., UC-San Diego, La Jolla, CA 92093
Get access

Abstract

High resolution SIMS (secondary ion mass spectrometry) depth profiles of Ge/Pd and Si/Pd/Ge/Pd non-alloyed ohmic contacts on InP are obtained by sputter-etching from the back (semiconductor) side. The samples contain an InGaAs etch stop layer, to allow chemical thinning, and InGaAsP marker layers, which allow alignment and calibration of the depth profiles. Detailed comparisons are made to corresponding contacts on GaAs, processed and analyzed under similar conditions. The importance of interfacial alloy formation, semiconductor regrowth, and dopant incorporation are highlighted.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

[1] Sands, T., Mat. Sci. Eng. 1, 289 (1989)Google Scholar
[2] Wang, L. C., Zhang, B., Fang, F., Marshall, E. D., Lau, S. S., Sands, T., and Kuech, T. F., J. Mater. Res. 3, 922 (1988)Google Scholar
[3] Palmstrøm, C. J., Schwarz, S. A., Yablonovitch, E., Harbison, J. P., Schwartz, C. L., Florez, L. T., Gmitter, T. J., Marshall, E. D., and Lau, S. S., J. Appl. Phys. 67, 334 (1990)CrossRefGoogle Scholar
[4] Schwarz, S. A., Palmstrøm, C. J., Schwartz, C. L., Sands, T., Shantharama, L. G., Harbison, J. P., Florez, L. T., Marshall, E. D., Han, C. C., Lau, S. S., Allen, L. H., and Mayer, J. W., J. Vac. Sci. Tech. A8, 2079 (1990)CrossRefGoogle Scholar
[5] Schwarz, S. A., Pudensi, M. A. A., Sands, T., Gmitter, T. J., Bhat, R., Koza, M., Wang, L. C., and Lau, S. S., Appl. Phys. Lett. 60, 1123 (1992)Google Scholar
[6] Wang, L. C., Li, Y. Z., Kappes, M., Lau, S. S., Hwang, D. M., Schwarz, S. A., and Sands, T., Appl. Phys. Lett., accepted for publicationGoogle Scholar
[7] Chen, W. X., Hsueh, S. C., Yu, P. K. L., and Lau, S. S., IEEE Elec. Dev. Lett. 7, 471 (1986)Google Scholar