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GaNAsBi Semiconductor Alloy with Temperature-Insensitive Bandgap

Published online by Cambridge University Press:  01 February 2011

Masahiro Yoshimoto ,
Wei Haung ,
Gan Feng  and
Kunishige Oe
Masahiro Yoshimoto
Affiliation:
yoshimot@dj.kit.ac.jp, Kyoto Inst. Tech., Cooperative Research Center, Matsugasaki,, Sakyo, Kyoto, N/A, N/A, Japan, +81-75-724-7932, +81-75-724-7930
Wei Haung
Affiliation:
hw8150@yahoo.co.jp, Japan
Gan Feng
Affiliation:
gfeng@kit.ac.jp, Japan
Kunishige Oe
Affiliation:
oeku@dj.kit.ac.jp, Japan
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Abstract

GaNy As1−x−y Bix alloys were grown by molecular beam epitaxy (MBE) using solid Ga, Bi, and As sources and nitrogen radicals generated from N2 in rf plasma. To achieve Bi incorporation into the epilayer, As flux was adjusted in a limited range on the brink of As shortage on the growing surface. GaNyAs1−x−y Bix alloys lattice-matched to GaAs substrates with different photoluminescence (PL) peak energies were obtained. The GaNy As1−x−y Bix alloy lattice-matched to GaAs turned out to have the structure of Ga(N0.34Bi0.66)zAs1−z. The PL spectra showed that the PL peak energy of GaNy As1−x−y Bix alloy decreased with increasing Bi and N contents with redshift coefficients of ∼62 meV/%Bi and ∼130 meV/%N, respectively, at room temperature. The temperature dependence of the PL peak energy for GaNy As1−x−y Bix in the temperature range of 150∼300 K is much smaller than that of InGaAsP. The temperature coefficients of GaNy As1−x−y Bix bandgaps were governed by the GaBi molar fraction and decrease with increasing GaBi molar fraction.

Keywords

crystal growthoptical propertiesBi

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