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Fundamental Materials-Issues involved in the Growth of GaN by Molecular Beam Epitaxy

Published online by Cambridge University Press:  21 February 2011

N. Newman ,
T.C Fu ,
X. Liu ,
Z. Liliental-Weber ,
M. Rubin ,
J. S. Chan ,
E. Jones ,
J. T. Ross ,
I. Tidswell  and
K. M. Yu
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N. Newman
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA, 94720
T.C Fu
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA, 94720
X. Liu
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA, 94720
Z. Liliental-Weber
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA, 94720
M. Rubin
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA, 94720
J. S. Chan
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA, 94720
E. Jones
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA, 94720
J. T. Ross
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA, 94720
I. Tidswell
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA, 94720
K. M. Yu
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA, 94720
N. Cheung
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA, 94720
E. R. Weber
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA, 94720
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Abstract

Gallium nitride is one of the most promising materials for ultraviolet and blue light-emitting diodes and lasers. Both Molecular Beam Epitaxy (MBE) and Metal-Organic Chemical Vapor Deposition (MOCVD) have recently made strong progress in fabricating high-quality epitaxial GaN thin films. In this paper, we review materials-related issues involved in MBE growth. We show that a strong understanding of the unique meta-stable growth process allows us to correctly predict the optimum conditions for epitaxial GaN growth. The resulting structural, electronic and optical properties of the GaN films are described in detail.

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References

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