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Formation of Metal Nitrides by Nitrogen Implantation

Published online by Cambridge University Press:  26 February 2011

En Ma ,
Bai-Xin Liu ,
Xin Chen  and
Heng-De Li
En Ma
Affiliation:
Department of Engineering Physics, Tsinghua University, Beijing, China
Bai-Xin Liu
Affiliation:
Department of Engineering Physics, Tsinghua University, Beijing, China
Xin Chen
Affiliation:
Department of Engineering Physics, Tsinghua University, Beijing, China
Heng-De Li
Affiliation:
Department of Engineering Physics, Tsinghua University, Beijing, China
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Abstract

A systematic study was performed to investigate the ion beam induced metal nitride formation by direct nitrogen implantation into 10 selected metals, either of thin film or bulk material. An X-ray diffractometer, together with a specially-designed Seemann-Bohlin attachment, was employed to provide fast and reliable phase identification in the thin implanted layer. The results show that room temperature nitrogen implantation can lead to the formation of many, but not all, of the equilibrium metal nitrides. The formation of metal nitrides by implantation is discussed in terms of the thermodynamic condition and the readiness of structural trans format ion.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 617
Copyright
Copyright © Materials Research Society 1986

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References

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