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Formation of Irregular Al Islands by Room-Temperature Deposition on NiAl(110)

Published online by Cambridge University Press:  11 March 2011

Dapeng Jing ,
Yong Han ,
Bariş Ünal ,
J. W. Evans  and
P. A. Thiel
Dapeng Jing
Affiliation:
Departments of Chemistry, Iowa State University, Ames, Iowa 50011 Ames Laboratory - USDOE, Iowa State University, Ames, Iowa 50011
Yong Han
Affiliation:
Institute of Physical Research and Technology, Iowa State University, Ames, Iowa 50011
Bariş Ünal
Affiliation:
Departments of Materials Science & Engineering, Iowa State University, Ames, Iowa 50011 Ames Laboratory - USDOE, Iowa State University, Ames, Iowa 50011
J. W. Evans
Affiliation:
Departments of Mathematics, Iowa State University, Ames, Iowa 50011 Departments of Physics & Astronomy, Iowa State University, Ames, Iowa 50011 Ames Laboratory - USDOE, Iowa State University, Ames, Iowa 50011
P. A. Thiel
Affiliation:
Departments of Chemistry, Iowa State University, Ames, Iowa 50011 Departments of Materials Science & Engineering, Iowa State University, Ames, Iowa 50011 Ames Laboratory - USDOE, Iowa State University, Ames, Iowa 50011
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Abstract

STM studies reveal that irregular non-equilibrium two-dimensional Al islands form during deposition of Al on NiAl(110) at 300 K. These structures reflect the multiple adsorption sites and diffusion paths available for Al adatoms on the binary alloy surface, as well as the details of inhibited edge diffusion and detachment-attachment kinetics of Al adatoms for numerous distinct step edge configurations. We attempt to capture these features by multi-site lattice-gas modeling incorporating DFT energetics for adatoms both at adsorption sites and transition states. This formulation enables description and elucidation of the observed island growth shapes.

Keywords

thin filmAlnanostructure

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References

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