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Formation of In-Cu Pairs in Silicon During Chemomechanical Polishing

Published online by Cambridge University Press:  25 February 2011

Th. Wichert ,
R. Keller ,
M. Deicher ,
W. Pfeiffer ,
H. Skudlik  and
D. Steiner
R. Keller
Affiliation:
Fakultät für Physik, Universität Konstaπz, D 7750 Konstanz, FRG
M. Deicher
Affiliation:
Fakultät für Physik, Universität Konstaπz, D 7750 Konstanz, FRG
W. Pfeiffer
Affiliation:
Fakultät für Physik, Universität Konstaπz, D 7750 Konstanz, FRG
H. Skudlik
Affiliation:
Fakultät für Physik, Universität Konstaπz, D 7750 Konstanz, FRG
D. Steiner
Affiliation:
Fakultät für Physik, Universität Konstaπz, D 7750 Konstanz, FRG
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Abstract

Using the perturbed γγ angular correlation technique (PAC) the pairing of Cu with the radioactive acceptor atom 111In in Si is detected. Because of the identity of the electric field gradients the so-called X defect, observed after chemomechanical polishing of Si wafers and known of neutralizing acceptor atoms in Si, is identified as a Cu atom. It is also shown that as-delivered Si wafers already contain Cu atoms which neutralize acceptor atoms if the wafers are annealed at 1173 K.

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