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Formation of buried α- and β- FeSi2 in (100) Si by high dose ion implantation

Published online by Cambridge University Press:  25 February 2011

K. Maex ,
A. Lauwers ,
M. Van Hove ,
W. Vandervorst  and
M. Van Rossum
K. Maex
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
A. Lauwers
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
M. Van Hove
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
W. Vandervorst
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
M. Van Rossum
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
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Abstract

A study on ion beam synthesis of buried α- and β-FeSi2 in >100< Si is presented. Phase formation has been investigated as a function of implant and anneal temperature. Layer characterization was performed by RBS, XRD, resistivity, spreading resistance and Hall effect measurements. Orientation effects in the layers have been observed depending on the implant temperature. Transport measurements show that die holes are the majority carriers in the semiconducting layers.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 869
Copyright
Copyright © Materials Research Society 1993

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