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Formation and Processing of High Tc Superconductor films with Pulsed Excimer Laser

Published online by Cambridge University Press:  28 February 2011

Tomoji Kawaiw ,
Masaki Kanaiw  and
Maki Kawai
Tomoji Kawaiw
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567, Japan
Masaki Kanaiw
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567, Japan
Maki Kawai
Affiliation:
The Institute of Physical and Chemical Research, Wako, Saitama 351–01, Japan.
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Abstract

High Tc YBa2 Cu3 Oy and GdBa2 Cu3 Oy thin films can be made by a laser sputtering method using LnBa2 Cu3 Oy (Ln=Y and Gd) ceramics as targets and cubic zirconia as a substrate in a high vacuum system. The superconcucting onset temperature and the zero resistance temperature of the film are 95 and 80K, respectively. The surfaces of these films were subjected to an irradiation with a focused pulsed excimer laser. Scanning of the beam led to the etching of the surface to form a groove. Photochemical processes on these superconductor films were studied using dynamic mass-spectroscopic method.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 99: Symposium AA – High-Temperature Superconductors , 1987 , 327
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1. Chaudhari, P. etal, Phys. Rev. Lett., 58, 2684 (1987)Google Scholar
Enomoto, Y. etal, Jpn. J. Appl. Phys., 26, L1248 (1987).Google Scholar
2. Ikeda, M. etal, Proc. ICALEO'83, Material Processing 1983, 135.Google Scholar
3. Dijkkamp, D. etal, Appl. Phys. Lett., 51, 619 (1987).Google Scholar