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Focused Ion Beam Implantation of GaAs-GaAlAs Quantum Well Structures

Published online by Cambridge University Press:  21 February 2011

P. M. Petroff ,
Xueyu Qian ,
Per Olof Holtz ,
R. J. Simes ,
J. H. English ,
J. Merz  and
R. Kubena
P. M. Petroff
Affiliation:
Materials Department and Electrical and Computer Engineering Department,University of California,Santa Barbara,CA. 93106
Xueyu Qian
Affiliation:
Materials Department and Electrical and Computer Engineering Department,University of California,Santa Barbara,CA. 93106
Per Olof Holtz
Affiliation:
Materials Department and Electrical and Computer Engineering Department,University of California,Santa Barbara,CA. 93106
R. J. Simes
Affiliation:
Materials Department and Electrical and Computer Engineering Department,University of California,Santa Barbara,CA. 93106
J. H. English
Affiliation:
Materials Department and Electrical and Computer Engineering Department,University of California,Santa Barbara,CA. 93106
J. Merz
Affiliation:
Materials Department and Electrical and Computer Engineering Department,University of California,Santa Barbara,CA. 93106
R. Kubena
Affiliation:
Hughes Research Laboratories,3011 Malibu Canyon Road,Malibu,CA 90265.
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Abstract

The effects of Implantation Enhanced Interdiffusion (IEI) in GaAs-GaAlAs quantum well structures are investigated. A Focused Ion Beam (FIB) source is used to implant narrow lines (500Å wide) with Ga+ ions. IEI in these structures is characterized by low temperature Cathodoluminescence. The dose effects and annealing kinetics dependence on IEI are presented. An unusual damage distribution which produces IEI deep below the surface is observed for the case of FIB implant. The possible origins of this effect and the limits of IEI for processing quantum wires and boxes are discussed.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 126: Symposium P – Advanced Surface Processes for Optoelectronics , 1988 , 55
Copyright
Copyright © Materials Research Society 1988

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References

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