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Flux Pinning Defects Induced by Electron Irradiation in Y1Ba2Cu3O7–8 Single Crystals

Published online by Cambridge University Press:  26 February 2011

J. Giapintzakis ,
M. A. Kirk ,
W. C. Lee ,
J. P. Rice ,
D. M. Ginsberg ,
I. M. Robertson  and
R. Wheeler
J. Giapintzakis
Affiliation:
Department of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 1110 W. Green Street, Urbana, Illinois 61801
M. A. Kirk
Affiliation:
Materials Science Division, Argonne National Laboratory, 9700 S. Cass Avenue, Argonne, Illinois 60439
W. C. Lee
Affiliation:
Department of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 1110 W. Green Street, Urbana, Illinois 61801
J. P. Rice
Affiliation:
Department of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 1110 W. Green Street, Urbana, Illinois 61801
D. M. Ginsberg
Affiliation:
Department of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 1110 W. Green Street, Urbana, Illinois 61801
I. M. Robertson
Affiliation:
Department of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 1110 W. Green Street, Urbana, Illinois 61801
R. Wheeler
Affiliation:
Materials Science Division, Argonne National Laboratory, 9700 S. Cass Avenue, Argonne, Illinois 60439
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Abstract

Single crystals of R1Ba2Cu3O7–8, (R=Y, Eu and Gd), have been irradiated with 0.4–1.0 MeV electrons in directions near the c-axis. An incident threshold electron energy for producing flux pinning defects has been found. In-situ TME studies found no visible defects induced by electron irradiation. This means that point defects or small clusters ( ≤ 20 Å) are responsible for the extra pinning. A consistent interpretation of the data suggests that the most likely pinning defect is the displacement of a Cu atom from the CuO2 planes.

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References

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