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Ferromagnetism in undoped semiconductors

Published online by Cambridge University Press:  23 June 2011

Yandong Ma ,
Ying Dai  and
Baibiao Huang
Yandong Ma
Affiliation:
School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R.China
Ying Dai*
Affiliation:
School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R.China
Baibiao Huang
Affiliation:
School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R.China
*
*E mail: daiy60@sdu.edu.cn
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Abstract

The so-called “d 0” magnetism observed in semiconductors, which is not caused by partially filled d orbitals, has challenged our conventional understanding on the origin of magnetism. One class of semiconductor materials showing d 0 ferromagnetism is undoped oxides and nitrides. Here, we review the ferromagnetic properties of undoped GaN and MgO based on our recent investigations. It is revealed that the room-temperature ferromagnetism originates from the anion dangling bonds associated with the surface cation-vacancies. And the magnetism of ferromagnetic coupling between the vacancy induced local magnetic moment by through-bond spin polarization in undoped semiconductors is reviewed according to our works.

Keywords

electronic structuredefectsmagnetic properties

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1370: Symposium YY – Computational Semiconductor Materials Science , 2011 , mrss11-1370-yy05-01
Copyright
Copyright © Materials Research Society 2011

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References

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