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Ferroelectric Liquid Crystal Light Valve Using SiO2 / A-Si:H Photodiode

Published online by Cambridge University Press:  21 February 2011

T. Horikawa ,
S. Tahata ,
S. Kaho ,
T. Masumi ,
N. Mikami ,
K. Takahashi ,
M. Nunoshita ,
H. Nakajima  and
K. Nishi
T. Horikawa
Affiliation:
Materials & Electronic Devices Lab.
S. Tahata
Affiliation:
Materials & Electronic Devices Lab.
S. Kaho
Affiliation:
Materials & Electronic Devices Lab.
T. Masumi
Affiliation:
Materials & Electronic Devices Lab.
N. Mikami
Affiliation:
Materials & Electronic Devices Lab.
K. Takahashi
Affiliation:
Materials & Electronic Devices Lab.
M. Nunoshita
Affiliation:
Materials & Electronic Devices Lab.
H. Nakajima
Affiliation:
Industrial Electronics & Systems Development Lab., MITSUBISHI ELECTRIC CORP., Amagasaki, Hyogo Japan
K. Nishi
Affiliation:
Industrial Electronics & Systems Development Lab., MITSUBISHI ELECTRIC CORP., Amagasaki, Hyogo Japan
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Abstract

A new type of ferroelectric liquid crystal light valve (FLCLV) is presented. The design of the FLCLV is based upon the linear equivalent circuit analyses. A photosensor in the FLCLV consists of a metal-insulator-semiconductor (MIS) photodiode. A-Si:H doped with boron and nitrogen [a-Si:(:N:B)] is used in the MIS diode. The a-Si:H(:B:N) film has a dark-conductivity of less than 1×1012 S/cm and a high photosensitivity.

Consequently, the writing characteristics of the FLCLV for a two dimensional (2D) image are evaluated. Using writing light of 630 nm and 1 mW/cm2, a high resolution capability of 120∼140 1p/mm is obtained.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 203
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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