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Fast Changes in a-Si:H Solar Cells After Severe Light-Soaking

Published online by Cambridge University Press:  21 February 2011

Bolko Von Roedern
Bolko Von Roedern*
Affiliation:
Solar Energy Research Institute, 1617 Cole Blvd, Golden, CO 80401–3993
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Abstract

The fast changes observed in the stabilized state of a-Si:H solar cells and modules at temperatures below 70°C are inconsistent with the commonly accepted picture of “defect annealing.” The fast changes observed in the stabilized state, for example when the temperature is altered, are explained in terms of converting the charge state of the dangling bond defects that are already present in the material. It is suggested that the slow degradation of solar cells arises from the creation of new defects and can be described by fitting stretched exponential curves to the solar cell performance data.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 493
Copyright
Copyright © Materials Research Society 1991

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References

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