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Fabrication of Polycrystalline Silicon on Glass from Fluorinated Precursors with the Aid of Atomic Hydrogen

Published online by Cambridge University Press:  15 February 2011

T. Akasaka ,
D. He  and
I. Shimizu
T. Akasaka
Affiliation:
Tokyo Institute of Technology, The Graduate School, 4259 Nagatsuta, Midoriku Yokohama Japan
D. He
Affiliation:
Tokyo Institute of Technology, The Graduate School, 4259 Nagatsuta, Midoriku Yokohama Japan
I. Shimizu
Affiliation:
Tokyo Institute of Technology, The Graduate School, 4259 Nagatsuta, Midoriku Yokohama Japan
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Abstract

High quality polycrystalline silicon was made on glass from fluorinated precursors by two step growth, i.e., (1) formation of seed crystals on glass by layer-by-layer(LL) technique and (2) grain-growth on the seeds. In LL technique, deposition of ultra-thin films and treatment with atomic hydrogen was repeated alternately. Columnar grains with 200 nm dia were grown epitaxy-like on the seeds by optimizing the deposition parameters under in situ observation with spectroscopic ellipsometry.

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