Hostname: page-component-54dcc4c588-br6xx Total loading time: 0 Render date: 2025-10-10T16:45:28.873Z Has data issue: false hasContentIssue false
  • English
  • Français

Fabrication of Highly Stable a-Si:H from Chlorinated Precursors

Published online by Cambridge University Press:  16 February 2011

M. Azuma ,
T. Yokoi  and
I. Shimizu
M. Azuma
Affiliation:
Tokyo Institute of Technology, The Graduate School, 4259 Nagatsuta, Midori-ku, Yokohama-city, Japan 227
T. Yokoi
Affiliation:
Tokyo Institute of Technology, The Graduate School, 4259 Nagatsuta, Midori-ku, Yokohama-city, Japan 227
I. Shimizu
Affiliation:
Tokyo Institute of Technology, The Graduate School, 4259 Nagatsuta, Midori-ku, Yokohama-city, Japan 227
Get access

Abstract

High quality a-Si:H was fabricated from SiH2Cl2 by ECR hydrogen plasma at high growth rate (>15 A/s). After sticking the precursors, SiHnClm (n+m≤3), stable Si-network was formed by chemical reactions enhanced on the heated substrate due to strong interaction between Cl and H bonded with Si. The defect densities of 3×1015 and 3×1016 cm3 were obtained for the films in the as-grown and the saturated states after light soaking, respectively. In these stable films, a surprisingly large amount of voids (2–10 vol%) was found by the simulation of the spectra of pseudo-dielectric constant measured by spectral ellipsometry.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 239
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Stutzmann, M., Jackson, W. and Tsai, C. C., Phys. Rev. B 45, 23 (1985)CrossRefGoogle Scholar
2. Tsuda, S., Takahama, T., Hishikawa, Y., Tarui, H., Nishiwaki, H., Wakisaka, K. and Nakano, S., J. Non-Cryst. Solids 164–166, 679 (1993)CrossRefGoogle Scholar
3. Shirai, H., Das, D., Hanna, J., and Shimizu, I., Appl. Phys. Lett. 59, 1096 (1991)CrossRefGoogle Scholar
4. Mahan, H. A., Nelson, B. H., Salamon, S. J. and Crandall, R. S., J. Non-Cryst. Solids 137&138, 657 (1991)CrossRefGoogle Scholar
5. Gangli, G. and Matsuda, A., J. Non-Cryst. Solids 164–166, 164 (1993)Google Scholar
6. Azuma, M., Yokoi, T., Shirai, H., J. Non-Cryst. Solids 164–166, 47 (1993)CrossRefGoogle Scholar
7. Aspens, D. E. and Studna, A. A., Phys. Rev. B 32, 985 (1983)CrossRefGoogle Scholar
8. Watanabe, T., Azuma, K., Tanaka, M., Nakatani, M., Sonobe, T. and Shimada, T., Jpn. J. Appl. Phys. 27, 1126 (1988)CrossRefGoogle Scholar
9. Tsuge, S., Hishikawa, Y., Okamoto, S., Sasaki, M., Tsuda, S., Nakano, S. and Kuwano, Y., Mat. Res. Soc. Symp. Proc. Vol 258, 869 (1992)CrossRefGoogle Scholar