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Fabrication and Electrical Properties of MBE Grown Metal-Gallium and Metal-Arsenic Compounds on Ga1-xAlxAs

Published online by Cambridge University Press:  26 February 2011

C.J. Palmstrøm ,
K.C. Garrison ,
B.-O. Fimland ,
T. Sands  and
R.A. Bartynski
C.J. Palmstrøm
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, NJ 07701
K.C. Garrison
Affiliation:
Department of Physics, Rutgers University, Piscataway, NJ 08854
B.-O. Fimland
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, NJ 07701
T. Sands
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, NJ 07701
R.A. Bartynski
Affiliation:
Department of Physics, Rutgers University, Piscataway, NJ 08854
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Abstract

Films of CoGa and CoAs have been deposited on Ga1-xAlxAs surfaces. CoAs films were found to be highly textured, but not single crystal. For CoGa films, however, single crystal growth was observed. The crystalline quality of the (100) oriented CoGa was good as determined by Rutherford backscattering with channeling measurements (χmin ∼7%) and cross-sectional transmission electron microscopy. Schottky barrier diodes fabricated from (100)CoGa/Ga1-xAlxAs and CoAs/Ga1-xAlxAs showed good characteristics with low ideality factors, n<1.15. Good Schottky barrier behavior was also found for (100)ErAs/GaAs structures.

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References

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