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Explosive Crystallization in A-Ge Films Irradiated withMicrosecond Laser Pulses

Published online by Cambridge University Press:  25 February 2011

R.K. Sharma  and
S.K. Bansal
R.K. Sharma
Affiliation:
Department of Physics and Astro Physics, University of Delhi Delhi - 110007, India
S.K. Bansal
Affiliation:
Department of Physics and Astro Physics, University of Delhi Delhi - 110007, India
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Abstract

Explosive crystallisation has been observed in deposited a-Ge filmsirradiated with pulsed Nd-glass laser beam of 400 micro second duration.Transmission electron microscopic examination of the irradiated film shows apolycrystalline region surrounded by radial dendrites of ~ 8-10 ;Cm size.Analysis of the results is consistent with the duplex-melting model of theexplosive crystallisation mechanism. Heat released during the amorphous tocrystalline transformation of a localised region abruptly crystallises thesurrounding area resulting in dendritic growth. The crystallisation isself-sustaining untill the temperature ahead of liquid/amorphous interfacedrops below 775 K. These results are consistent with earlier study ofexplosive crystallisation in unsupported a-Ge films and further confirm thatthe heat loss to the underlying substrate governs the dynamics of thecrystallisation process.

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References

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