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Excimer-Laser-Initiated, Dry Etching of Single Crystal GaAs

Published online by Cambridge University Press:  21 February 2011

P. Brewer ,
S. Halle  and
R. M. Osgood
P. Brewer
Affiliation:
Department of Electrical Engineering and Columbia Radiation Laboratory Columbia University, New York, NY 10027
S. Halle
Affiliation:
Department of Electrical Engineering and Columbia Radiation Laboratory Columbia University, New York, NY 10027
R. M. Osgood
Affiliation:
Department of Electrical Engineering and Columbia Radiation Laboratory Columbia University, New York, NY 10027
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Abstract

Gas-phase UV-initiated (193 nm) photodissociations of methyl (CH3) and trifluoromethyl (CF3) containing compounds have been investigated for the dry etching of single crystal GaAs substrates. Etching rates of greater than 1 μ/min. have been observed. Etching rates and surface profiles will be discussed in terms of crystal orientation, reactive etching fragments, and laser-surface interactions. Products of the etching reactions have been examined by UV absorption, mass spectrometry and laser-induced fluorescence techniques. Applications to large scale and micron dimension etching processes will be briefly discussed.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 29: Symposium I – Laser-Controlled Chemical Processing of Surfaces , 1983 , 179
Copyright
Copyright © Materials Research Society 1984

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References

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