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Excimer Laser Irradiation Effect on Metalorganic Molecular Beam Deposition of Al and Alas : Prospects for Laser-Assisted Epitaxial Growth of Gaalas

Published online by Cambridge University Press:  26 February 2011

Eisuke Tokumitsu ,
Takumi Yamada ,
Makoto Konagai  and
Kiyoshi Takahashi
Eisuke Tokumitsu
Affiliation:
Department of Electrical and Electronic Engineering Tokyo Institute of Technology 2-12-1 Ohokayama, Meguro-ku, Tokyo 152, JAPAN
Takumi Yamada
Affiliation:
Department of Electrical and Electronic Engineering Tokyo Institute of Technology 2-12-1 Ohokayama, Meguro-ku, Tokyo 152, JAPAN
Makoto Konagai
Affiliation:
Department of Electrical and Electronic Engineering Tokyo Institute of Technology 2-12-1 Ohokayama, Meguro-ku, Tokyo 152, JAPAN
Kiyoshi Takahashi
Affiliation:
Department of Electrical and Electronic Engineering Tokyo Institute of Technology 2-12-1 Ohokayama, Meguro-ku, Tokyo 152, JAPAN
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Abstract

Triisobutylaluminum (TIBA) was used as an aluminum source for metalorganic molecular beam epitaxy (MOMBE). The optical absorption coefficient for TIBA was found to be larger than both tri ethyl aluminum and triethylgallium. TIBA was introduced into a laser-induced MOMBE system and selective deposition of Al and AlAs was carried out. Al metal was deposited on the area where the ArF excimer laser was irradiated and no deposition was observed without the excimer laser irradiation at a substrate temperature of 350 C. Furthermore, a laser large enhancement of the growth rate of AlAs was observed at 350 C.

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References

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