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Evolution of Stress During Formation of Titanium Disilicide by Rta and Tube Furnace Annealing

Published online by Cambridge University Press:  25 February 2011

J.F. Jongste ,
O.B. Loopstra ,
G.C.A.M. Janssen  and
S. Radelaar
J.F. Jongste
Affiliation:
DIMES, Section Submicron Technology, Delft University of Technology, P.o.Box 5046, 2600 GA Delft, the Netherlands.
O.B. Loopstra
Affiliation:
Laboratory of Metallurgy, Delft University of Technology.
G.C.A.M. Janssen
Affiliation:
DIMES, Section Submicron Technology, Delft University of Technology, P.o.Box 5046, 2600 GA Delft, the Netherlands.
S. Radelaar
Affiliation:
DIMES, Section Submicron Technology, Delft University of Technology, P.o.Box 5046, 2600 GA Delft, the Netherlands.
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Extract

Integrated circuit fabrication consists of many processing steps: e.g. lithography, etching, implantation and metallization. Some of these processes are combined with thermal processing. Heat treatments require special attention because previous fabrication steps may be influenced: e.g. dopant profiles may be deteriorated. The amount of interference of an annealing step with a former process is determined by the ratio of the reaction rates (and hence by the difference in activation energies).

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 265
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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