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Evolution of Film Crystalline Structure During the Ultrafast Deposition of Crystalline Si Films

Published online by Cambridge University Press:  01 February 2011

Haijun Jia ,
Hiroshi Kuraseko ,
Hiroyuki Fujiwara  and
Michio Kondo
Haijun Jia
Affiliation:
jiahaijunlz@hotmail.com, AIST, Research Center for Photovoltaics, Central 2, 1-1-1 Umezono,, Tsukuba, Ibaraki, 305-8568, Japan
Hiroshi Kuraseko
Affiliation:
haijun-jia@aist.go.jp, The Furukawa Electric Co., Ltd., Yawata-Kaigandori,Chiba, 290-8555, Japan
Hiroyuki Fujiwara
Affiliation:
hiro-fujiwara@aist.go.jp, National Institute of Advanced Industrial Science and Technology (AIST), Research Center for Photovoltaics, Central 2, 1-1-1 Umezono,, Tsukuba, Ibaraki, 305-8568, Japan
Michio Kondo
Affiliation:
michio.kondo@aist.go.jp, National Institute of Advanced Industrial Science and Technology (AIST), Research Center for Photovoltaics, Central 2, 1-1-1 Umezono,, Tsukuba, Ibaraki, 305-8568, Japan
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Abstract

By using a high density microwave plasma source, an ultrafast deposition rate over 1000 nm/s has been achieved for polycrystalline silicon (poly-Si) film deposition. We find that crystalline structure of the deposited film evolves along the film growth direction, i.e. large grains in surface region while small grains in the bottom region of the film. Systematic study of the deposition process has been performed as a function of the deposition duration. Based on the observed results, a possible mechanism, the annealing-assisted plasma-enhanced chemical vapor deposition, is proposed to describe the film growth process.

Keywords

annealingplasma-enhanced CVD (PECVD) (deposition)crystallographic structure

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References

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