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Epitaxial Growth of Thin Ge Films on [001] Gaas by Laser Photochemical Vapor Deposition from GeH4

Published online by Cambridge University Press:  26 February 2011

V. Tavitian ,
C. J. Kiely  and
J. G. Eden
V. Tavitian
Affiliation:
University of Illinois, Department of Electrical and Computer Engineering, 1406 West Green Street, Urbana, IL 61801
C. J. Kiely
Affiliation:
University of Illinois, Department of Electrical and Computer Engineering, 1406 West Green Street, Urbana, IL 61801
J. G. Eden
Affiliation:
University of Illinois, Department of Electrical and Computer Engineering, 1406 West Green Street, Urbana, IL 61801
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Abstract

Epitaxial Ge films have been grown on [001] GaAs for substrate temperatures (Ts) as low as 285°C by photodissociating GeH4 at 193 nm in parallel geometry. For a laser fluence of ~15 mJ - cm-2, the film growth rate varies from 0.6 to ~5 nm - min-1, depending upon Ts and gas pressure. Plan and cross-sectional TEM studies of the Ge/GaAs bicrystal demonstrate that the 400–700 A thick Ge films are single crystal and epitaxial with the substrate. The present limitation on epitaxial film thickness appears to be imposed by reduced adatom mobility at the temperatures investigated.

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References

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