Hostname: page-component-54dcc4c588-5q6g5 Total loading time: 0 Render date: 2025-10-11T01:16:04.244Z Has data issue: false hasContentIssue false
  • English
  • Français

The Epitaxial Growth of Metastable Phases

Published online by Cambridge University Press:  26 February 2011

Robin F. C. Farrow
Robin F. C. Farrow*
Affiliation:
Westinghouse Research and Development Center 1310 Beulah Road, Pittsburgh, PA 15235
Get access

Abstract

Pseudomorphism, the epitaxial growth of metastable phases, is reviewed. Emphasis is given to recent developments in the qrowth and investigation of α-Sn films on InSb and CdTe since this is a case where there is a very large strain energy barrier to the metastable to stable phase transformation. As a result, pseudomorphic growth of α-Sn can be sustained to film thicknesses of ∼1 μm.

Progress towards stabilization of direct gap group IV semiconductors is discussed and possible applications of pseudomorphism considered.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 37: Symposium D – Layered Structures, Epitaxy, and Interfaces , 1984 , 275
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Schulz, L. G., Acta. Cryst. 4, 487 (1951).Google Scholar
2. Jesser, W. A., Mater. Sci. Eng. 4, 279 (1969).Google Scholar
3. Farrow, R. F. C., Robertson, D. S., Williams, G. M., Cullis, A. G., Jones, G. R., Young, I. M., and Dennis, P. N. J., J. Cryst. Growth 54, 507 (1981).Google Scholar
4. Vina, L., Logothetidis, S., Höchst, H., to be published in the proceedings of the 17th International Conference on the Physics of Semiconductors, San Francisco, August 6–10, 1984.Google Scholar
5. Menendez, J., Höchst, H., Thin Solid Films 111, 375 (1984).Google Scholar
6. Takatani, S., Chung, Y. W., to be published in the Proceedinos of the Fall 1983 TMS Symposium on Submicron Device Structures.Google Scholar
7. Jesser, W. A., Matthews, J. W., Acta Met. 16, 1307 (1968).Google Scholar
8. Jesser, W. A., Matthews, J. W., Phil Mag 15, 1097 (1967).CrossRefGoogle Scholar
9. Matthews, J. W., J. Vac. Sci. Technol. 3(3), 133, 1968.Google Scholar
10. Farrow, R. F. C., J. Vac. Sci. Technol. B1(2), 222 (1983).Google Scholar
11. Noreika, A. J., Farrow, R. F. C., unpublished work.Google Scholar
12. Williams, R. H., McKinley, A., Hughes, G. J., Humphreys, T. P., J. Vac. Sci. Technol. B2(3), 561 (1984).CrossRefGoogle Scholar
13. Mattern, M., Luth, H., Surface Science 126, 502 (1983).Google Scholar
14. Buchenauer, C. J., Cardona, M., Pollak, F. H., Phys. Rev. B3, 1243 (1971).Google Scholar
15. Phillips, J. C. in “Bonds and Bands in Semiconductors,” Materials Science and Technology Series, Academic Press, New York, pp. 93–94.Google Scholar
16. H¨chst, H., personal communication.Google Scholar
17. Cerdeira, F., Cardona, M., Phys. Rev. B5, 1440 (1972).Google Scholar
18. Höchst, H., Hernández-Calderon, I., Surface Science 126, 25 (1983).Google Scholar
19. Hernández-Calderon, I., Höchst, H., in press, Surface Science (1984).Google Scholar
20. Groves, S., Paul, W., Phys. Rev. Lett. 11, 194 (1963).Google Scholar
21. Chelikowsky, J. R., Cohen, M. L., Phys. Rev. B 14, 556 (1976).Google Scholar
22. Oguz, S., Paul, W., Deutsch, T. F., Tsaur, B. Y., Murphy, D. V., Appl. Phys. Lett. 43, 850 (1983).Google Scholar
23. Sullivan, P. W., Appl. Phys. Lett. 44, 190 (1984).Google Scholar
24. Suoiyama, K., J. Appl. Phys. 56, 1733 (1984).Google Scholar
25. Goodman, C. H. L., IEE Proc. 129, p1-1(5), 189 (1982).Google Scholar
26. Goodman, C. H. L., IEE Proc. in press, 1984.Google Scholar
27. Kroemer, H., Phys. Rev. 109, 1856 (1958).Google Scholar
28. Liu, L., Leung, W., Phys. Rev. B12, 2336 (1975).Google Scholar
29. Roman, B. J., Ewald, A. W., Phys. Rev. B5, 3914 (1972).Google Scholar
30. Broerman, J. G., Phys. Rev. Lett. 45, 747 (1980).Google Scholar
31. Harrison, W. A., J. Vac. Sci. Technol. 14, 1016 (1977).Google Scholar
32. Heinrich, B., Liu, C., Arrott, A. S., Paper presented at International Conference on Molecular Beam Epitaxy, August 1–3, San Francisco, in press J. Vac. Sci. Technol.Google Scholar
33. Machlin, E. S., Chaudhari, P., pages 11–29 in “Synthesis and Properties of Metastable Phases,” Ed. by Machlin, E. S., Rowland, T. J., Pub. By The Metallurgical Society of AIME 1980.Google Scholar