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Epitaxial Growth of α-Fe(111) ON Si(111) Studied by X-RAY Diffraction and Transmission Electron Microscopy

Published online by Cambridge University Press:  25 February 2011

Yang-Tse Cheng ,
Yen-Lung Chen ,
M. M. Karmarkar  and
Wen-Jin Meng
Yang-Tse Cheng
Affiliation:
General Motors Research Laboratories, Warren, Michigan 48090-9055
Yen-Lung Chen
Affiliation:
General Motors Research Laboratories, Warren, Michigan 48090-9055
M. M. Karmarkar
Affiliation:
Wayne State University, Detroit, Michigan 48202
Wen-Jin Meng
Affiliation:
General Motors Research Laboratories, Warren, Michigan 48090-9055
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Abstract

Epitaxial α-Fe films have been grown on Si(111) substrates at 30 and 320°C by electron beam evaporation in an ultra high vacuum environment to a thickness between a few hundred and several thousand Angstroms. Conventional θ – 2θ x-ray diffraction and transmission electron microscopy show that the α-Fe films are oriented with the Fe(1ll) plane parallel to the Si(111) plane and with the Fe[110] direction parallel to the Si[110] direction in the plane of the substrate.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991 , 187
Copyright
Copyright © Materials Research Society 1991

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