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Epitaxial growth of (010)-oriented β-FeSi2 film on Si(110) substrate

Published online by Cambridge University Press:  20 March 2013

Kensuke Akiyama ,
Hiroshi Funakubo  and
Masaru Itakura
Kensuke Akiyama
Affiliation:
Kanagawa Industrial Technology Center, 705-1 Shimoimaizumi, Ebina-shi, Kanagawa 243-0435, Japan
Hiroshi Funakubo
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
Masaru Itakura
Affiliation:
Department of Applied Science for Electronics and Materials, Kyushu University, 6-1 Kasuga, Fukuoka 816-8580, Japan
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Abstract

High-quality (010)-oriented epitaxial β-FeSi2 films were grown on Si(110) substrates by coating silver thin layer. The full width at half maximum of the rocking curve of β-FeSi2040 was 0.14o for the film deposited at 800°C on Si(110) substrates with 95 nm-thick silver layer. Moreover, this epitaxial β-FeSi2 film was constructed with single domain structure, and the lattice parameter of a-axis was extended by 0.7%. The photoluminescence spectrum from this epitaxial β-FeSi2 indicated that the band-gap was modulated by lattice strain of a-axis.

Keywords

thin filmsemiconductingepitaxy

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