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Enhancement of the Amorphous to Microcrystalline Phase Transition in Silicon Films Deposited by Sif4-H2-He Plasmas

Published online by Cambridge University Press:  09 August 2011

G. Cicalai ,
M. Losurdo ,
P. Capezzuto ,
G. Bruno ,
T. Ligonzo ,
L. Schiavulli ,
C. Minarini  and
M. C. Rossi
G. Cicalai
Affiliation:
Plasma Chemistry Research Center, MITER-CNR, cscpgc07@area.ba.cnr.it, Dipartimento di Chimica-Università di Bari, Via Orabona, 4 70126-Bani, Italy
M. Losurdo
Affiliation:
Plasma Chemistry Research Center, MITER-CNR, cscpgc07@area.ba.cnr.it, Dipartimento di Chimica-Università di Bari, Via Orabona, 4 70126-Bani, Italy
P. Capezzuto
Affiliation:
Plasma Chemistry Research Center, MITER-CNR, cscpgc07@area.ba.cnr.it, Dipartimento di Chimica-Università di Bari, Via Orabona, 4 70126-Bani, Italy
G. Bruno
Affiliation:
Plasma Chemistry Research Center, MITER-CNR, cscpgc07@area.ba.cnr.it, Dipartimento di Chimica-Università di Bari, Via Orabona, 4 70126-Bani, Italy
T. Ligonzo
Affiliation:
Dipartimento di Fisica-Università di Bari
L. Schiavulli
Affiliation:
Dipartimento di Fisica-Università di Bari
C. Minarini
Affiliation:
ENEA C.R. Portici Napoli
M. C. Rossi
Affiliation:
Dipartimento di Ingegneria Elettronica UniversitA di Roma3, Roma Italy
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Abstract

Hydrogenated microcrystalline silicon (μc-Si:H) thin films have been obtained by plasma decomposition of SiF4-H2-He mixtures at low temperature (120 °C). The size of crystalline grain and their volume fraction with respect to the amorphous phase have been found dependent on the r.f. power as evaluated by grazing incidence X-ray diffraction, microRaman and ellipsometry measurements. Chemical and electrical properties change according to the microcrystallinity. Pure and/or highly microcrystalline silicon has been obtained at temperature and r.f. power as low as 120 °C and 15 Watt.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 536: Symposium F – Microcrystalline & Nanocrystalline Semiconductors - 1998 , 1998 , 493
Copyright
Copyright © Materials Research Society 1999

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