Hostname: page-component-54dcc4c588-64p75 Total loading time: 0 Render date: 2025-10-13T21:34:49.625Z Has data issue: false hasContentIssue false
  • English
  • Français

Enhancement of Flux Pinning Force by Ion Beam Irradiation of Epitaxial Ba2Cu3O7-δ Films

Published online by Cambridge University Press:  26 February 2011

M. P. Siegal ,
Julia M. Phillips ,
R. B. van Dover ,
E. M. Gyorgy ,
A. E. White  and
J. H. Marshall
M. P. Siegal
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
Julia M. Phillips
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
R. B. van Dover
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
E. M. Gyorgy
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
A. E. White
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
J. H. Marshall
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
Get access

Abstract

Epitaxial Ba2YCu3O7-δ (BYCO) films grown by the ex situ BaF2 process are comparable to single crystals both in crystalline integrity (RBS/ion channeling χmin < 3%) and the value and temperature dependence of the critical current (Jc) in an applied magnetic field in the BYCO (001) direction of Ha = 0.9T. With the appropriate dose of either 2 MeV H+ or 135Xe+, we are able to enhance Jc by a factor of 2 in H = 0.9T with little effect on Tc. The ability to change Jc by such a large factor in these films is a prerequisite for isolation and study of the induced defects and study their properties.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Civaie, L., Marwick, A. D., Worthington, T. K., Kirk, M. A., Thompson, J. R., Knisin-Elbaum, L., Sun, Y., Klem, J. R., and Holtzberg, F., Phys. Rev. Lett. 67, 648 (1991).Google Scholar
2. Jin, S., Tiefel, T. H., Sherwood, R. C., Davis, M. E., van Dover, R. B., Kammlott, G. W., Fastnacht, R. A., and Keith, H. D., Appl. Phys. Lett. 52, 2074 (1988).Google Scholar
3. Campbell, A. M. and Evetts, J. E, Advances in Physics, 21, 199 (1972).Google Scholar
4. Dimos, D., Chaudhari, P., and Mannhart, J., Phys. Rev. B, 41, 4038 (1990).Google Scholar
5. van Dover, R. B., Gyorgy, E. M., Schneemeyer, L. F., Mitchell, J. W., Rao, K. V., Puzniak, R., and Waszczak, J. V., Nature 342, 55 (1989).Google Scholar
6. van Dover, R. B., Gyorgy, E. M., White, A. E., Schneemeyer, L. F., Felder, R. J., and Waszczak, J. V., Appl. Phys. Lett. 56, 2681 (1990).Google Scholar
7. Civaie, L., Marwick, A. D., McElfresh, M. W., Worthington, T. K., Malezemoff, A. P., and Holtzberg, F. H., Phys. Rev. Lett. 65, 1164 (1990).Google Scholar
8. Willis, J. O., Cooke, D. W., Brown, R. D., Cost, J. R., Smith, J. F., Smith, J. L., Ailin, R. M., and Maez, M., Appl. Phys. Lett. 53, 417 (1988).Google Scholar
9. Inam, A., Wu, X. D., Nazar, L., Hegde, M. S., Rogers, C. T., Venkatesan, T., Simon, R. W., Daly, K., Padamsee, H., Kirchgessner, J., Moffat, D., Rubin, D., Shu, Q. S., Kalokitis, D., Fathy, A., Pendrick, V., Brown, R., Brycki, B., Belohoubek, E., Drabeck, L., Gruner, G., Hammond, R., Gamble, F., Lairsoii, B. M., and Bravman, J. C., Appl. Phys. Lett. 56, 1178 (1990).Google Scholar
10. Eom, C. B., Sun, J. Z., Lairson, B. M., Streiffer, S. K., Marshall, A. F., Yamamoto, K., Anlage, S. M., Bravman, J. C., and Geballe, T. H., Physica C, 171, 354 (1990).Google Scholar
11. Ramesh, R., Hwang, D. M., Barner, J. B., Nazar, L., Ravi, T. S., Inam, A., Dutta, B., Wu, X. D., and Venkatesan, T., J. Mater. Res. 5, 704 (1990).Google Scholar
12. Hawley, M., Raistrick, I. D., Beery, J. G., and Houlton, R. J., Science, 251, 1537 (1991).Google Scholar
13. Gerber, Ch., Anselmetti, D., Bednorz, J. G., Mannhart, J., and Schlom, D. G., Nature, 350, 279 (1991).Google Scholar
14. White, A. E., Short, K. T., Jacobson, D. C., Poate, J. M., Dynes, R. C., Mankiewich, P. M., Skocpol, W. J., and Howard, R. E., Phys. Rev. B, 37, 3755 (1988).Google Scholar
15. Masegi, T. M., Terai, T., Takahashi, Y., Enomoto, Y., and Kubo, S., Jap. J. Appl. Phys. 28, L1521 (1989).Google Scholar
16. Li, Y., Ren, C., Chen, G., Chen, J., and Zou, S., J. Appl. Phys. 69, 7915 (1991).Google Scholar
17. Roas, B., Hensel, B., and Saemann-Ischenko, G., Appl. Phys. Lett. 54, 1051 (1989).Google Scholar
18. Siegal, M. P., Phillips, J. M., van Dover, R. B., Tiefel, T. H., and Marshall, J. H., J. Appl. Phys. 68, 6353 (1990).Google Scholar
19. Siegal, M. P., Phillips, J. M., Hebard, A. F., van Dover, R. B., Farrow, R. C., Tiefel, T. H., and Marshall, J. H., J. Appl. Phys. 70, 4982 (1991).Google Scholar
20. Mankiewich, P. M., Schofield, J. H., Skocpol, W. J., Howard, R. E., Dayem, A. H., and Good, E., Appl. Phys. Lett. 51, 1753 (1987).Google Scholar
21. Bean, C. P., Phys. Rev. Lett. 8, 250 (1962).Google Scholar
22. Gyorgy, E. M., van Dover, R. B., Jackson, K. A., Schneemeyer, L. F., and Waszczak, J. V., Appl. Phys. Lett 55, 283 (1989).Google Scholar
23. Ziegler, F. J. and Biersack, J. P., The Stopping and Range of Ions in Solids, (Pergamon Press, New York, 1985).Google Scholar
24. Van Tendeloo, G., Ruault, M-O., Bemas, H., and Gasgnier, M., J. Mater. Res. 6, 677 (1991).Google Scholar
25. Roas, B., Hensel, B., Henke, S., Klaumunzer, S., Kabius, B., Watanabe, W., Saemann-Ischenko, G., Shultz, L., and Urban, K., Europhys. Lett. 11, 669 (1990).Google Scholar
26. Watanabe, H., Kabius, B., Urban, K., Roas, B., Klaumunzer, S., and Saemann- Ischenko, G., Physica C, 179, 75 (1991).Google Scholar
27. van Dover, R. B., White, A. E., Schneemeyer, L. F., Waszcak, J. V., and Felder, R. J., (unpublished).Google Scholar
28. Clark, G. J., Marwick, A. D., Legoues, F., Laibowitz, R. B., Koch, R., and Madakson, P., Nucl. Instr. and Meth. in Phys. Res. B32, 405 (1988).Google Scholar
29. Cutro, J. A., van Dover, R. B., Schneemeyer, L. F., White, A. E., Gyorgy, E. M., Waszczak, J. V, Felder, R. J., Rudman, D. A., and Orlando, T. P., (unpublished).Google Scholar