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Elevated Temperature Silicon Carbide Chemical Sensors

Published online by Cambridge University Press:  10 February 2011

M. A. George ,
M. A. Ayoub ,
D. Ila  and
D. J. Larkin
M. A. George
Affiliation:
Department of Chemistry, University of Alabama in Huntsville
M. A. Ayoub
Affiliation:
Department of Chemistry, University of Alabama in Huntsville
D. Ila
Affiliation:
Center for Irradiation of Materials, Alabama A° 1999
D. J. Larkin
Affiliation:
NASA Lewis Research Center
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Abstract

In this study, the (I-V) properties of the sensors were measured as a function of hydrogen, propylene and methane exposure at temperatures up to 400° C and sensor responses were observed for each gas. The response to hydrogen and propylene had a rapid increase and leveling off of the current followed by the subsequent decrease to the baseline when the gas was switched off. However, exposure to methane resulted in a rapid spike in the current followed by a gradual increase with continued exposure. X-ray photoelectron (XPS) studies of methane exposed SiC sensors revealed that this behavior is attributed to the oxidation of methane at the Pd surface.

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References

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