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Electronic and Optical Properties of a-Si1−xCx:H Films Produced From Admixtures of Silane and Ditertiarybutylsilane

Published online by Cambridge University Press:  16 February 2011

K. Gaughan ,
J.M. Viner  and
P.C. Taylor
K. Gaughan
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
J.M. Viner
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
P.C. Taylor
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
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Abstract

We investigated the optical and electronic properties of amorphous silicon carbide (a-Si1−xCx:H) films produced by plasma enhanced chemical vapor deposition from admixtures of silane and ditertiarybutylsilane [SiH2 (C4H9) 2 or DTBS] using photothermal deflection spectroscopy, electrical conductivity and its temperature dependence as well as photoconductivity. These a-Si1−xCx:H films exhibit low Urbach energies and high photoconductivities similar to films produced with other carbon feedstock sources. We also present our results for hydrogen diluted a-Si1−xCx:H films using DTBS as the carbon feedstock source.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 553
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1. Kruangam, D., in AMorphous and Microcrystalline Semiconductor Devices, edited Kanicki, J. (Artech House, Boston, 1991), Vol. 1, p. 195.Google Scholar
2. Tawada, Y., Tsuge, K., Kondo, M., Okamoto, H. and Hamakawa, Y., J. Appl. Phys. 53, 5273 (1982).Google Scholar
3. Bullot, J. and Schmidt, M.P., Phys. Stat. Sol. 143 (B), 345 (1987).Google Scholar
4. Matsuda, A., Yamaoka, T., Wolff, S., Koyama, M., Imanishi, Y., Kataoka, H., Matsuura, H. and Tanaka, K., J. Appl. Phys. 60, 4025 (1986).Google Scholar
5. Folsh, J., Rubel, H. and Schade, H., in AMorphous Silicon Technology -1992, edited by Thompson, M.J., Hamakawa, Y., LeComber, P.G., Madan, A. and Schiff, E.A. (Materials Research Society, Pittsburgh, 1992), Vol. 258, p. 631.Google Scholar
6. Baker, S., Spear, W. and Gibson, R., Philos. Mag. B 62, 213 (1990).Google Scholar
7. Alverez, F., Sebastiani, M., Pozzilli, F., Fiorini, P. and Evangelisti, F., J. Appl. Phys. 71, 267 (1992).Google Scholar
8. Camargo, S. and Beyer, W., J. Non-Cryst. Solids 114, 807 (1989).Google Scholar
9. Li, Y.-M., in AMorphous Silicon Technology - 1993, edited by Madan, A., Thompson, M.J., Schiff, E.A., Tanaka, K. and LeComber, P.G. (Materials Research Society, Pittsburgh, 1993), Vol. 297, p 803.Google Scholar
10. Stutzmann, M., Philos. Mag. B 60, 531 (1989).Google Scholar