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Electron Beam Induced Current Studies of Nickel Silicide/Silicon Schottky Barrier Heights

Published online by Cambridge University Press:  28 February 2011

J.M. Gibson ,
D.C. Joy ,
R.T. Tung ,
J.L. Ellison ,
C. Pimentel  and
A.F.J. Levi
J.M. Gibson
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
D.C. Joy
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
R.T. Tung
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
J.L. Ellison
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
C. Pimentel
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
A.F.J. Levi
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

We discuss the use of electron beam induced current measurements in a scanning electron microscope to deduce local Schottky barrier height with high spatial resolution. For theNiSi2/Si system, using UHV-prepared thin “templates”, wedemonstrate the uniformity of barrier heights for A or B single crystal films. In comparison, there is evidence for local variation of barrier height in mixed A+B films. Quantitative models for EBIC dependence on barrier height are discussed. Local variations in barrier height can be overlooked by other techniques and may be much more common than previously suspected.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 163
Copyright
Copyright © Materials Research Society 1986

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