Hostname: page-component-54dcc4c588-42vt5 Total loading time: 0 Render date: 2025-10-11T19:51:49.911Z Has data issue: false hasContentIssue false
  • English
  • Français

Electron Beam Annealing of Phosphorus Implanted CadmiumTelluride

Published online by Cambridge University Press:  25 February 2011

C.B. Yang ,
M.L. Peng ,
J.T. Lue  and
H.L. Hwang
C.B. Yang
Affiliation:
Department of Electrical Engineering Department of Physics National Tsing Hua University, Hsinchu, Taiwan 300, R.O.C.
M.L. Peng
Affiliation:
Department of Electrical Engineering Department of Physics National Tsing Hua University, Hsinchu, Taiwan 300, R.O.C.
J.T. Lue
Affiliation:
Department of Electrical Engineering Department of Physics National Tsing Hua University, Hsinchu, Taiwan 300, R.O.C.
H.L. Hwang
Affiliation:
Department of Electrical Engineering Department of Physics National Tsing Hua University, Hsinchu, Taiwan 300, R.O.C.
Get access

Abstract

The behavior of dopants in CdTe has been examined by Krogen and DeNobel andothers. The n-type material is easy to dope with good electrical activity.The p-CdTe is more difficult to produce with concentration higher than 6×1016 cm-3. For doping levels above this, theelectrical activity of the dopant drops sharply and the hole mobility isreduced. The difficulty in doping p-CdTe stems from both strong compensationeffects and low solubility of the usual dopant species.

The electron beam pulse method has been applied to annealing phosphorusimplanted cadmium telluride. The threshold electron beam energy densitynecessary to give good electrical activation and mobility have beenestablished in the range between 9.2-10.1 J.cm-2 for doses from 1014-1016 ions cm-2. A sheet resistanceas low as 6.32×10 Ω/  and a carrier concentration as high as 3×1018 cm-3 have been obtained. The impurityprofile of the annealed samples have been obtained by etching layer by layerwith the etching rate calibrated by chemical techniques and the impurityconcentration determined by van der Pauw/Hall technique.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. J.W., Mayer, Nucl. Instrum, Methods, 43, 55 (1966)Google Scholar
2. W., Akutagawa, K., Zanio, and J.W., Mayer, Nucl. Instrum. Methods, 55, 383 (1967).Google Scholar
3. C.J., Johnson, Proc. IEEE 56, 1719 (1968).Google Scholar
4. M., Popova and P., Polivka, Czech. J. Phys. B23 (1973) 110.Google Scholar
5. Wald, F.V., Rev. Phys. Appl., No. 2, 277 (1977).Google Scholar
6. Mandel, G., Phys. Rev. 134, A1073, (1964).Google Scholar
7. Furgolle, B., et.al., Solid State Commun. 14, 1237 (1974).Google Scholar
8. Bean, J.C., Gibbons, J.F., et. al., in ”Proc. Fourth International Conference on Implantation in Semiconductors”,Osaka,Japan, 229 (1974).Google Scholar
9. Linhard, J., Scharff, M., and Schiott, H.E., Danske, Kgl., , Videnskab Selskab, Mat. Fys. Medd. 33, No. 14 (1963).Google Scholar
10. Chu, W.K., et al., Backseattering Spectrometry (Academic Pr., N.Y.)(1978).Google Scholar
11. Gibbons, J.F., et al., "Projected Range Statistics in Semiconductors and Related Materials".Google Scholar
12. Hwang, H.L., Peng, M.L., Yang, M.H. and Sun, C.Y., Tech. Report, May (1984).Google Scholar
13. Arkadeva, E.N., et al., Sov. Phys. Semicond. 9, 563 (1975).Google Scholar
14. Aqrinskaya, N.V., et al., Sov. Phys. Semicond. 5, 767 (1971).Google Scholar
15. Hall, R.B. and Woodbury, H.H., J. Appl. Phys. 39, 5361 (1968).Google Scholar
16. Chu, M., et al., J. Electrochem. Soc., Vol. 127, No. 2, 483 (1980).Google Scholar
17. Agrinskaya, N.V., et al., Proc. Int. Symp. on CdTe, Strasbourg, 1971.Google Scholar