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Electroluminescent Devices Based On Polycrystalline Silicon Films For Large-Area Applications

Published online by Cambridge University Press:  10 February 2011

N. Koshida ,
E. Takizawa ,
H. Mizuno ,
S. Arai ,
H. Koyama  and
T. Sameshima
N. Koshida
Affiliation:
Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184, Japan
E. Takizawa
Affiliation:
Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184, Japan
H. Mizuno
Affiliation:
Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184, Japan
S. Arai
Affiliation:
Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184, Japan
H. Koyama
Affiliation:
Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184, Japan
T. Sameshima
Affiliation:
Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184, Japan
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Abstract

It is shown that porous polycrystalline Si (PPS) diodes operate as light-emitting diodes (LEDs) with efficiencies comparable to conventional porous silicon (PS) diodes fabricated on singlecrystalline substrates. Judging from the electroluminescence (EL) characteristics such as emission spectra, diode current dependence of EL intensity, and its temperature dependence, the common EL mechanism seems to exist in PPS and PS diodes. Observed similarity in the photoluminescence (PL) properties between PPS and PS is consistent with this hypothesis. The capability of a poly-Si thin film transistor as a driver of PPS-LED is also demonstrated.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 486: Symposium H – Materials & Devices for Silicon Based Optoelectronics , 1997 , 151
Copyright
Copyright © Materials Research Society 1998

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References

1. Ueno, T., Akiba, Y., Shinohara, T., Koyama, H., Koshida, N., and Tarui, Y., Jpn. J. Appl. Phys. 32, L5 (1993).Google Scholar
2. Oguro, T., Koyama, H., Ozaki, T., and Koshida, N., J. Appl. Phys. 81, 1407 (1997).Google Scholar
3. Koshida, N., Koyama, H., Ozaki, T., Araki, M., Oguro, T., and Mizuno, H., Mat. Res. Soc. Symp. Proc. 358, 695 (1995).Google Scholar
4. Sameshima, T., Usui, S., and Sekiya, M., IEEE Electron Dev. Lett. EDL-7, 276 (1986).Google Scholar