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Electroluminescence from p-n Junction Leds Consisting of N-Dopedand Cl-Doped ZnSe Layers

Published online by Cambridge University Press:  21 February 2011

K. Ohkawa ,
A. Ueno  and
T. Mitsuyu
K. Ohkawa
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co. Ltd., Moriguchi, Osaka 570, Japan
A. Ueno
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co. Ltd., Moriguchi, Osaka 570, Japan
T. Mitsuyu
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co. Ltd., Moriguchi, Osaka 570, Japan
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Abstract

We have fabricated ZnSe p-n junction LEDs with a new structure ofPt/p-ZnSe/n-ZnSe/n-GaAs. The dopant used for n-type ZnSe was Cl, and p-typeZnSe:N was formed by nitrogen radical doping. The LEDs exhibited goodrectification properties. We have found that electroluminescence at 77 K wasdominated by recombination emission between free electrons and acceptorholes at 2.705 eV. Increasing the temperature, recombination emissionbetween donor electrons and free holes dominated blue bandedge emissionregion.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 228: Symposium N – Materials for Optical Information Processing , 1991 , 339
Copyright
Copyright © Materials Research Society 1992

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References

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