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Electrical Properties of Crystalline and Amorphous Pb(ZrxTi1−x)O3 Thin Films Prepared by the Sol-Gel Technique

Published online by Cambridge University Press:  25 February 2011

Yuhuan Xu ,
Chih-Hsing Cheng ,
Ren Xu  and
John D. Mackenzie
Yuhuan Xu
Affiliation:
Department of Materials Science and Engineering, University of California, Los Angeles, CA 90025
Chih-Hsing Cheng
Affiliation:
Department of Materials Science and Engineering, University of California, Los Angeles, CA 90025
Ren Xu
Affiliation:
Department of Materials Science and Engineering, University of California, Los Angeles, CA 90025
John D. Mackenzie
Affiliation:
Department of Materials Science and Engineering, University of California, Los Angeles, CA 90025
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Abstract

Pb(ZrxTi1−x)O3 (PZT) solutions were prepared by reacting lead 2-ethylhexanoate with titanium n-propoxide and zirconium n-propoxide. Films were deposited on several kinds of metal substrate by dip-coating. Crystalline PZT films and amorphous PZT films were heat-treated for 1 hour at 650°C and at 400°C, respectively. Electrical properties including dielectric, pyroelectric and ferroelectric properties of both crystalline and amorphous PZT films were measured and compared. The amorphous PZT thin films exhibited ferroelectric-like behaviors.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 271: Symposium N – Better Ceramics Through Chemistry V , 1992 , 359
Copyright
Copyright © Materials Research Society 1992

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References

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