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The Electrical Behavior of Pd/AIN/Semiconductor Thin Film Hydrogen Sensing Structures

Published online by Cambridge University Press:  15 March 2011

L. Rimai ,
M.H. Rahman ,
E.F. McCullen ,
L. Zhang ,
J.S. Thakur ,
R. Naik ,
G. M. Newaz ,
K.Y.S. Ng ,
R.J. Baird  and
G.W. Auner
L. Rimai
Affiliation:
Department of Electrical and Computer Engineering Wayne State University, Detroit, MI-48202
M.H. Rahman
Affiliation:
Department of Chemical Engineering and Materials Science Wayne State University, Detroit, MI-48202
E.F. McCullen
Affiliation:
Department of Physics and Astronomy Wayne State University, Detroit, MI-48202
L. Zhang
Affiliation:
Department of Electrical and Computer Engineering Wayne State University, Detroit, MI-48202
J.S. Thakur
Affiliation:
Department of Electrical and Computer Engineering Wayne State University, Detroit, MI-48202
R. Naik
Affiliation:
Department of Physics and Astronomy Wayne State University, Detroit, MI-48202
G. M. Newaz
Affiliation:
Department of Mechanical Engineering Wayne State University, Detroit, MI-48202
K.Y.S. Ng
Affiliation:
Department of Chemical Engineering and Materials Science Wayne State University, Detroit, MI-48202
R.J. Baird
Affiliation:
Department of Electrical and Computer Engineering Wayne State University, Detroit, MI-48202
G.W. Auner
Affiliation:
Department of Electrical and Computer Engineering Wayne State University, Detroit, MI-48202
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Abstract

The device on Si substrates behaves as an MIS capacitor and the response to hydrogen is given by a shift of the capacitance vs. bias profile along the bias voltage axis, whereas the device on SiC behaves as a rectifying diode and the presence of hydrogen causes a shift of the forward current vs. voltage plot. The relatively large forward current, in both cases, indicates that there is measurable electrical transport across the AlN layer, but at the same temperature the turn on bias is different. Either structure contains two rectifying contacts in series, namely a Schottky contact between Pd and AlN and a heterojunction between AlN and the substrate.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 815 , 2004 , J5.8
Copyright
Copyright © Materials Research Society 2004

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References

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