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Electrical and Structural Properties of Ruthenium Film Grown by Atomic Layer Deposition Using Liquid-Phase Ru(CO)3(C6H8) Precursor

Published online by Cambridge University Press:  01 February 2011

Sung-Hoon Chung ,
Vladislav Vasilyev ,
Evgeni Gorokhov ,
Yong-Won Song  and
Hyuk-Kyoo Jang
Sung-Hoon Chung
Affiliation:
shchung@kpu.ac.kr, Korea Polytechnic University, Department of Nano-Optics, Shiheung 429-793, Korea, Republic of
Vladislav Vasilyev
Affiliation:
ywsong@kpu.ac.kr, Korea polytechnic university, nano-optics engineering, 2121, Jeongwang-dong, Shiheung, 429-793, Korea, Republic of, 82-31-8041-0714, 82-31-8041-0729
Evgeni Gorokhov
Affiliation:
vladislav_v_2000@yahoo.com, Korea Polytechnic University, Department of Nano-Optics, Shiheung, 429-793, Korea, Republic of
Yong-Won Song
Affiliation:
Gorokhov@kpu.ac.kr, Korea Polytechnic University, Department of Nano-Optics, Shiheung, 429-793, Korea, Republic of
Hyuk-Kyoo Jang
Affiliation:
hkjang@mecharonics.com, Mecharonics Co., Ltd., R&D Center, Pyontaek, 459-020, Korea, Republic of
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Abstract

We investigated effects of thermal annealing on Ru films deposited on the 8 inch Si substrates using a volatile liquid-phase Ru precursor, tricarbonyl-1,3-cyclohexadienyl ruthenium (Ru(CO)3(C6H8)) by an atomic layer deposition (ALD) technique. Structural and electrical properties of the films were characterized by scanning probe microscopy, X-ray diffractometry, sheet resistance. Grazing incidence X-ray diffraction (GIXRD) patterns show typical Ru hexagonal polycrystalline peaks as annealing temperature was increased. At the highest annealing temperature condition, Ta = 700 °C electrical resistivity become 6 times less than in as-deposited films.

Keywords

atomic layer depositionRustructural

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References

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