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Electrical and Chemical Characterization of Contacts to Silicon Carbide

Published online by Cambridge University Press:  25 February 2011

Jeremy B. Petit  and
Mary V. Zeller
Jeremy B. Petit
Affiliation:
verdrup Technology, Inc., 2001 Aerospace Parkway, Brook Park, OH 44142
Mary V. Zeller
Affiliation:
NASA-Lewis Research Center, 21000 Brookpark Rd., Cleveland, OH 44135
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Abstract

Chemical and electrical studies were performed to determine the characteristics of contacts to 6H-SiC. Both elemental metals (Ni, Mo) and suicides (MoSi2, TaSi2, TiSi2) were studied. Chemical analysis by Auger Electron Spectroscopy (AES) was performed to examine interface reactions caused by heat treatment. Electrical measurements (current-voltage and capacitance-voltage) were made during annealing sequences to determine the rectifying or ohmic characteristics of the contacts. Where possible, barrier height and contact resistance values were calculated.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 567
Copyright
Copyright © Materials Research Society 1992

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References

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