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EL2 and the Electronic Structure of the AsGa—Asi Pair in GaAs: the Role of Jahn-Teller Relaxation

Published online by Cambridge University Press:  26 February 2011

G. A. Baraff ,
M. Lannoo  and
M. Schluter
G. A. Baraff
Affiliation:
A.T.&T. Bell Laboratories, Murray Hill, N.J. 07974
M. Lannoo
Affiliation:
A.T.&T. Bell Laboratories, Murray Hill, N.J. 07974
M. Schluter
Affiliation:
A.T.&T. Bell Laboratories, Murray Hill, N.J. 07974
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Abstract

The levels and excitation energies of the weakly interacting AsGa—Asi defect pair have been calculated using the model energy functional introduced by Baraff and Schluter, modified so as to allow Jahn Teller relaxation to distort the Asi away from the symmetry site. The physics underlying this calculation and the results emerging from it are described in this paper. We find that many previously unrelated experimental observations about EL2 are well accounted for by this model. However, there are still some controversial aspects of the fit of the model to the observed properties of EL2 which we cite as requiring further study.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 375
Copyright
Copyright © Materials Research Society 1988

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References

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