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Effects of Ga-Irradiation On Properties of Materials Processedby A Focused Ion Beam (FIB)

Published online by Cambridge University Press:  17 March 2011

H. D. Wanzenboeck ,
H. Langfischer ,
A. Lugstein ,
E. Bertagnolli ,
U. Grabner ,
P. Pongratz ,
B. Basnar ,
J. Smoliner  and
E. Gornik
H. D. Wanzenboeck
Affiliation:
Institute for Solid State Electronics; Vienna University of Technology; A-1040 Vienna, Austria Institute for Applied and Technical Physics; Vienna Univ. of Technol.; A-1060 Vienna, Austria Microstructure Center (MISZ); Vienna University of Technology; A-1040 Vienna, Austria
H. Langfischer
Affiliation:
Institute for Solid State Electronics; Vienna University of Technology; A-1040 Vienna, Austria Institute for Applied and Technical Physics; Vienna Univ. of Technol.; A-1060 Vienna, Austria Microstructure Center (MISZ); Vienna University of Technology; A-1040 Vienna, Austria email: Heinz.Wanzenboeck@tuwien.ac.at
A. Lugstein
Affiliation:
Institute for Solid State Electronics; Vienna University of Technology; A-1040 Vienna, Austria Institute for Applied and Technical Physics; Vienna Univ. of Technol.; A-1060 Vienna, Austria Microstructure Center (MISZ); Vienna University of Technology; A-1040 Vienna, Austria email: Heinz.Wanzenboeck@tuwien.ac.at
E. Bertagnolli
Affiliation:
Institute for Solid State Electronics; Vienna University of Technology; A-1040 Vienna, Austria Institute for Applied and Technical Physics; Vienna Univ. of Technol.; A-1060 Vienna, Austria Microstructure Center (MISZ); Vienna University of Technology; A-1040 Vienna, Austria email: Heinz.Wanzenboeck@tuwien.ac.at
U. Grabner
Affiliation:
Institute for Solid State Electronics; Vienna University of Technology; A-1040 Vienna, Austria Institute for Applied and Technical Physics; Vienna Univ. of Technol.; A-1060 Vienna, Austria Microstructure Center (MISZ); Vienna University of Technology; A-1040 Vienna, Austria email: Heinz.Wanzenboeck@tuwien.ac.at
P. Pongratz
Affiliation:
Institute for Solid State Electronics; Vienna University of Technology; A-1040 Vienna, Austria Institute for Applied and Technical Physics; Vienna Univ. of Technol.; A-1060 Vienna, Austria Microstructure Center (MISZ); Vienna University of Technology; A-1040 Vienna, Austria email: Heinz.Wanzenboeck@tuwien.ac.at
B. Basnar
Affiliation:
Institute for Solid State Electronics; Vienna University of Technology; A-1040 Vienna, Austria Institute for Applied and Technical Physics; Vienna Univ. of Technol.; A-1060 Vienna, Austria Microstructure Center (MISZ); Vienna University of Technology; A-1040 Vienna, Austria email: Heinz.Wanzenboeck@tuwien.ac.at
J. Smoliner
Affiliation:
Institute for Solid State Electronics; Vienna University of Technology; A-1040 Vienna, Austria Institute for Applied and Technical Physics; Vienna Univ. of Technol.; A-1060 Vienna, Austria Microstructure Center (MISZ); Vienna University of Technology; A-1040 Vienna, Austria email: Heinz.Wanzenboeck@tuwien.ac.at
E. Gornik
Affiliation:
Institute for Solid State Electronics; Vienna University of Technology; A-1040 Vienna, Austria Institute for Applied and Technical Physics; Vienna Univ. of Technol.; A-1060 Vienna, Austria Microstructure Center (MISZ); Vienna University of Technology; A-1040 Vienna, Austria email: Heinz.Wanzenboeck@tuwien.ac.at
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Abstract

Focused Ion Beam (FIB) technology allows to process various materials withina lateral range below 100 nm. The feasibility to mechanically sputter aswell as to direct-write nanostructures and the fact that Ga-ions areutilized is unique for this method. The focused Ga-ions are used to locallyinduce a chemical vapor deposition of volatile precursor molecules adsorbedon a surface. Local deposition of metals and dielectrics has been achievedon a sub-µm scale utilizing a focused ion beam. This method is highlysuitable for advanced microelectronic semiconductor fabrication. However,material specifications are narrow for these tailor-made applications. Theeffect of the Ga-ions implanted into the material both during sputtering anddeposition has been realized as a key parameter for the function of FIBprocessed microelectronic devices. For Si-based semiconductors Ga can beused as dopant intentionally implanted into a Si substrate to locally modifythe conductivity of Si. The results of locally confined ion irradiation onthe surface roughness of a Si surface have been exploited by atomic forcemicroscopy (AFM). Both local sputter depletion of the sample surface as wellas sub-µm deposition of selected metals or dielectrics by ion-inducedchemical vapor deposition (CVD) has been examined. The penetration depth andthe distribution of Ga ions during the deposition process have been studiedby simulation and experimentally by profiling with secondary ion massspectroscopy (SIMS). Transmission Electron Microscopy (TEM) ofcross-sections of the ion processed materials has revealed amorphisation ofthe crystalline substrate. For focused ion beam assisted deposition theeffects of ion irradiation on the interface to the substrate and the localefficiency of the deposition are illustrated and discussed. The prospects offocused ion beam processing for modification of microelectronic devices inthe sub-µm range and the limitations are demonstrated by the examplesshown.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 647: Symposium O – Ion Beam Synthesis & Processing of Advanced Materials , 2000 , O6.6
Copyright
Copyright © Materials Research Society 2001

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