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The Effects of Annealing Temperature on the Characteristics of Buried Oxide Silicon-On-Insulator

Published online by Cambridge University Press:  28 February 2011

B.-Y Mao ,
P.-H. Chang ,
H.W. Lam ,
B.W. Shen  and
J.A. Keenan
B.-Y Mao
Affiliation:
Semiconductor Process and Design Center, M/S 944, Texas Instruments. Dallas, TX 75265
P.-H. Chang
Affiliation:
Central Research Laboratory, M/S 147. Texas Instruments. Dallas, TX 75265
H.W. Lam
Affiliation:
Semiconductor Process and Design Center, M/S 944, Texas Instruments. Dallas, TX 75265
B.W. Shen
Affiliation:
Semiconductor Process and Design Center, M/S 944, Texas Instruments. Dallas, TX 75265
J.A. Keenan
Affiliation:
Central Research Laboratory, M/S 147. Texas Instruments. Dallas, TX 75265
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Abstract

The effects of post implantation annealing on the properties of buried oxide silicon-on-insulator (SOI) substrates in the temperature range of 1150°C to 1300°C have been studied. Microstructural analyses showed that the crystallinity of the top silicon layer was improved at higher annealing temperature. Lower thermal donor generation at 450°C was observed in SOI annealed at higher temperature. The improvement in microstructure and lower thermal donor generation were correlated to the lower oxygen concentration in the top silicon film.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 251
Copyright
Copyright © Materials Research Society 1986

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