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Effects of Ambient Gas on the Out-Diffusion of Nickel and Copper through Thin Gold Films

Published online by Cambridge University Press:  22 February 2011

R. K. Lewis ,
S. K. Ray  and
K. Seshan
R. K. Lewis
Affiliation:
IBM Z/41C, Route 52, Hopewell Junction, NY 12533
S. K. Ray
Affiliation:
IBM Z/41C, Route 52, Hopewell Junction, NY 12533
K. Seshan
Affiliation:
IBM Z/41C, Route 52, Hopewell Junction, NY 12533
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Abstract

The low temperature (300–400°C) out-diffusion of an underlying metal through a thin film overlayer of another metal has been studied in ambients of N2 and forming gas. Surface oxidation of this out-diffused metal can interfere with the attachment of terminating components used in semiconductor devices. AES depth profile analysis has shown that the out-diffusion of Ni through Au is suppressed in a forming gas ambient. It has also been shown that the extent of this out diffusion can be modified considerably by the presence of Cu.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 48: Symposium E – Applied Materials Characterization , 1985 , 425
Copyright
Copyright © Materials Research Society 1985

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References

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