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The Effect of Thermal Spike on the Ion Irradiation Induced Grain Growth

Published online by Cambridge University Press:  28 February 2011

K. H. Chae ,
J. H. Song ,
J. H. Joo ,
J. J. Woo ,
C. N. Whang ,
Y. J. Oh  and
H. J. Jung
K. H. Chae
Affiliation:
Department of Physics, Yonsei University, Seoul 120–749, Korea
J. H. Song
Affiliation:
Department of Physics, Yonsei University, Seoul 120–749, Korea
J. H. Joo
Affiliation:
Department of Physics, Yonsei University, Seoul 120–749, Korea
J. J. Woo
Affiliation:
Department of Physics, Yonsei University, Seoul 120–749, Korea
C. N. Whang
Affiliation:
Department of Physics, Yonsei University, Seoul 120–749, Korea
Y. J. Oh
Affiliation:
Korea Institute of Science and Technology, Seoul 130–650, Korea
H. J. Jung
Affiliation:
Korea Institute of Science and Technology, Seoul 130–650, Korea
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Abstract

The relation between the ion irradiation induced grain growth in bilayer system and the basic parameters involved in ion beam mixing process was studied. TEM micrographs showed that a significant grain growth has been induced by Ar+ irradiation at room temperature. The grain size increases rapidly in low dose region, while it approaches a saturated value in high dose region, and it has close relationship with thermodynamic properties such as cohesive energy ( ΔHc ) and heat of mixing( ΔHm ). The experimental results are in good agreement with the model for the grain growth based on the thermal spike induced atomic migration.

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References

REFERENCES

[1]. Liu, B. X., Phys. Stat. Sol. (a) 94, 11 (1986).CrossRefGoogle Scholar
[2]. Liu, J. C. and Mayer, J. W., Nucl. Instr. and Meth. B19/20, 538 (1987).CrossRefGoogle Scholar
[3]. Tsaur, B. Y. and Maenpaa, M., J. Appl. Phys. 52, 728 (1981).Google Scholar
[4]. Ibrahim, A. M. and Thomson, D. A., Nucl. Instr. Meth. B7/8, 566 (1985).Google Scholar
[5]. Wang, P., Thomson, D. A. and Smeltzer, W. W.. Nucl. Instr. Meth. B7/8, 97 (1985).Google Scholar
[6]. Alexander, D. E., Was, G. S., and Rehn, L. E., Nucl. Instr. Meth. B59/60, 462 (1991).Google Scholar
[7]. Liu, J. C., Li, J., and Mayer, J. W., J. Appl. Phys. 67, 2355 (1990).Google Scholar
[8]. Alexander, D. E., Was, G. S., and Rehn, L. E., Mat. Res. Soc. Symp. Proc. Vol. 157, 155 (1990).Google Scholar
[9]. Cheng, Y. T., Van Rossum, M., Nicolet, M. A., and Johnson, W. L., Appl. Phys. Lett. 45, 185 (1984).Google Scholar
[10]. Van Rossum, M., Cheng, Y. T., Nicolet, M. A., and Johmson, W. L., Appl. Phys. Lett. 46, 610 (1985).Google Scholar
[11]. Alexander, D. E., Was, G. S., and Rehn, L. E., J. Appl. Phys. 70, 1252 (1991).Google Scholar
[12]. Shewmon, P. G., Transformation in Hetals (McGraw-hill, NY. 1969) p. 121.Google Scholar
[13]. Shewmon, P. G., Diffusion in Solids (Mcgeaw-hill, NY, 1963) p. 126.Google Scholar
[14]. Miedema, A. R., Phil. Techn. Rev. 36, 217 (1976).Google Scholar
[15]. Kittle, C., Introduction to Solid State Physics, 5th ed. (Wiley, NY, 1976) p. 74.Google Scholar