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The Effect of Heat Treatment on Grain Boundary Properties in Cast Polycrystalline Silicon

Published online by Cambridge University Press:  15 February 2011

P.E. Russell ,
C.R. Herrington ,
D.E. Burke  and
P.H. Holloway
P.E. Russell
Affiliation:
Solar Energy Research Institute, 1617 Cole Blvd., Golden, Colorado 80401
C.R. Herrington
Affiliation:
Solar Energy Research Institute, 1617 Cole Blvd., Golden, Colorado 80401
D.E. Burke
Affiliation:
University of Florida, Gainesville, Florida, 32611
P.H. Holloway
Affiliation:
University of Florida, Gainesville, Florida, 32611
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Abstract

The effects of heat treatment at temperatures appropriate for solar cell device fabrication on grain boundaries in cast poicrystalline silicon have been studied. An MIS device structure using a 200° C heating was used for fabricating test devices on heat treated samples for EBIC studies. Grain boundary effective surface recombination velocities (Seff gb ) and effective mid-grain diffusion lengths were measured. Seffgb was found to increase after heat treatment. Segregation of oxygen to grain boundaries has been observed in heat treated samples.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 5: Symposium B – Grain Boundaries in Semiconductors , 1981 , 185
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

1. Redfield, D., Appl. Phys. Lett. 38(3), 174 (1981)CrossRefGoogle Scholar
2. Solar Energy Research Institute Polycrystalline Silicon Subcontractors Review Meeting, Colorado Springs, Colorado, June 17–19, 1981. SERI/CP6141263Google Scholar
3. For an excellent review of this subject see the chapter on “Charge Collection Scanning Electron Microscopy” by Leamy, H.J., in Physical Electron Microscopy, ed. by Wells, O.C., Heinrich, K.F.J. and Newbury, D.E., Van Nostrand Reinhold (1981)Google Scholar
4. Rozenzweig, W., Bell System Tech. J., Vol. 41, 1573 (1962)CrossRefGoogle Scholar
5. Watanabe, M., Actor, G. and Gatos, H.C., IEEE Trans. E1. Dev. Vol. ED–24, No. 9, 1172 (1977)Google Scholar
6. Grove, A.S., Physics and Technology of Semiconductor Devices, John Wiley and Sons, New York, (1967)Google Scholar
7. Hackett, W.H. Jr., Journal Appl. Phys. 43, 1649 (1972)CrossRefGoogle Scholar
8. Jastrzebski, L., Lagonski, J. and Gatos, H.C., Appl. Phys. Lett. 27, 537 (1975)CrossRefGoogle Scholar
9. Fossum, J.G., Lindholm, F.A. and Shibib, M.A., IEEE Trans. Elec. Dev., ED–26, No. 9, 1294 (1979)Google Scholar
10. Kazmerski, L.L. and Ireland, P.J., Solar Energy Research Institute, Private communication (1981)Google Scholar
11. See for example: Magee, T.J. et al. , Appl. Phys. Lett. 39(3). 260 (1981)Google Scholar