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Effect of Electric ARC Plasma Jet Treatment on Mos Structure Reliability

Published online by Cambridge University Press:  15 February 2011

V. M. Maslovsky  and
G. Ya. Pavlov
V. M. Maslovsky
Affiliation:
Zelenograd Research Institute of Physical Problems, 103460 Moscow, Russia
G. Ya. Pavlov
Affiliation:
Centre for Analysis of Substances, 9, Elektrodnaya st., 111524 Moscow, Russia
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Abstract

The effect of electric arc plasma jet treatment (APJT) on MOS structure reliability has been investigated. Si/SiO2/Si*/Al structures have been studied using the technique of constant current charge to breakdown before and after APJT. The study showed that APJT can improve MOS structure reliability: constant current charge to breakdown Qbd increased to more than 5 C·cm-2 and breakdown field Ebd increased to more than 20 MV/cm. This result was attributed to a structural modification of SiO2 and its interfaces as a result of APJT. Evidence for these structural changes is the appearance of additional SiO2 IR absorption peak which was observed by us.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 391: Symposium T – Materials Reliability in Microelectronics V , 1995 , 139
Copyright
Copyright © Materials Research Society 1995

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References

1 Maslovsky, V.M. and G.Ya, . Pavlov in Proceedings of the Second International Symposium on Ultra-Clean Processing of Silicon Surfaces (UCPSS'94), IMEC, Belgium, Brugges, 1994, pp. 83–86.Google Scholar
2 Baraban, A.P. and Konorov, P.P., Phys. Low-Dim. Struct. 4/5, 121–126 (1994).Google Scholar
3 Manchaudal, L., Vasi, J., and Bhattacharyya, A.V., J. Appl. Phys. 52 (7) (1981).Google Scholar
4 Maslovsky, V.M., Yu.Lichmanov, O., and Simanovich, E.V., Pis'ma Zh. Tekhn. Fiz. 19 (24), 11–16 (1993).Google Scholar
5 G.Ya, . Pavlov, and Knyazev, I.V., Book of Summaries International Conference on Advanced and Laser Technologies, Moscow, Part 4 (1992) p. 118.Google Scholar