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The Effect of Doping on the Energy Distribution of Localized States and Carrier Transport in Disordered Organic Semiconductors

Published online by Cambridge University Press:  15 February 2011

Vladimir I Arkhipov ,
Paul Heremans ,
Evgenia V. Emelianova ,
Guy J. Adriaenssens  and
Heinz Bässler
Vladimir I Arkhipov
Affiliation:
IMEC, Kapeldreef 75, B-3001 Heverlee-Leuven, Belgium Darmstadt University of Technology, Institute of Material Science, Petersenstrasse 23, D-64281 Darmstadt, Germany
Paul Heremans
Affiliation:
IMEC, Kapeldreef 75, B-3001 Heverlee-Leuven, Belgium
Evgenia V. Emelianova
Affiliation:
Semiconductor Physics Laboratory, University of Leuven, Celestijnenlaan 200D, B-3001 Heverlee-Leuven, Belgium
Guy J. Adriaenssens
Affiliation:
Semiconductor Physics Laboratory, University of Leuven, Celestijnenlaan 200D, B-3001 Heverlee-Leuven, Belgium
Heinz Bässler
Affiliation:
Institute of Physical, Nuclear and Macromolecular Chemistry, Philipps University of Marburg, Hans-Meerwein-Strasse, D-35032 Marburg, Germany
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Abstract

Doping of a disordered organic semiconductor gives rise to additional energy disorder due to the Coulomb interaction between randomly distributed dopant ions and carriers localized in intrinsic hopping sites. Although the carrier density increases with increasing doping level the additional energy disorder can significantly reduce the carrier hopping mobility. At higher doping levels the filling of deep states takes over, which leads to steeply increasing mobility at high dopant concentrations.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 771: Symposium L – Organic and Polymeric Materials and Devices , 2003 , L5.7
Copyright
Copyright © Materials Research Society 2003

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