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The Dynamics of Cadmium Telluride Etching

Published online by Cambridge University Press:  01 February 2011

K. D. Dobson ,
P. D. Paulson ,
B. E. McCandless  and
R. W. Birkmire
K. D. Dobson
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716 USA
P. D. Paulson
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716 USA
B. E. McCandless
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716 USA
R. W. Birkmire
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716 USA
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Abstract

CdTe etching was investigated using variable angle spectroscopic ellipsometry and glancing angle x-ray diffraction. Treatment with HNO3:H3PO4 (NP) based etches was shown to form amorphous-Te surface films which spontaneously crystallize following etching. Br2/methanol (BM) etching forms very thin amorphous-Te films. NP-etched surfaces are stable in ambient air for ∼1 hr before beginning to oxidize, while BM etched films oxidize immediately following treatment. CdTe grain boundary etching by NP was minimized using more acidic etches. Device analysis suggests that a higher Te content produces more stable back contacts by attenuating Cu diffusion. Mechanistic details of NP etching are discussed.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 763: Symposium B – Compound Semiconductor Photovoltaics , 2003 , B3.1
Copyright
Copyright © Materials Research Society 2003

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