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Dynamic Annealing Phenomena and the Origin of RTA-Induced“Hairpin” Dislocations

Published online by Cambridge University Press:  25 February 2011

W. Maszara ,
D.K. Sadana ,
G.A. Rozgonyi ,
T. Sands ,
J. Washburn  and
J.J. Wortman
W. Maszara
Affiliation:
1North Carolina State University, Raleigh, North Carolina 27695-7916
D.K. Sadana
Affiliation:
1North Carolina State University, Raleigh, North Carolina 27695-7916 Microelectronic Center of North Carolina, Research Triangle Park, North Carolina 27709
G.A. Rozgonyi
Affiliation:
1North Carolina State University, Raleigh, North Carolina 27695-7916 Microelectronic Center of North Carolina, Research Triangle Park, North Carolina 27709
T. Sands
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
J. Washburn
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
J.J. Wortman
Affiliation:
1North Carolina State University, Raleigh, North Carolina 27695-7916
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Abstract

The geometry, origin, and diffusion along hairpin defects in Si wereinvestigated using TEM and SIMS techniques. The defect that grows from theamorphous-crystalline (a/c) interface following solid phase epitaxy growthfront was found to be a perfect dislocation with a/2(101) Burgers vector.Misoriented microcrystallites within the a/c transition region are proposedto be nucleation sites for the hairpin dislocations. The density of thecrystallites increases with an overall coarsening of the interface whichoccurs during dynamic annealing processes stimulated by implantation orpost-implantation low temperature annealing. Hairpin dislocations were foundto pipe-diffuse boron at much higher rates than bulk processes significantlyshifting dopant profiles. The diffusion coefficient of boron pipe diffusionat 1150°C was found to be about 104 times higher than the bulkone.

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References

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