Hostname: page-component-54dcc4c588-trf7k Total loading time: 0 Render date: 2025-10-06T13:11:27.613Z Has data issue: false hasContentIssue false
  • English
  • Français

Dual Role of Tin Reaction Barrier in Gold-Based Metallization to GaAs

Published online by Cambridge University Press:  22 February 2011

A. Piotrowska ,
E. Kaminska ,
M. Guziewicz ,
S. Kwiatkowski  and
A. Turos
A. Piotrowska
Affiliation:
Institute of Electron Technology, 02-668 Warsaw, Poland
E. Kaminska
Affiliation:
Institute of Electron Technology, 02-668 Warsaw, Poland
M. Guziewicz
Affiliation:
Institute of Electron Technology, 02-668 Warsaw, Poland
S. Kwiatkowski
Affiliation:
Institute of Nuclear Studies, 00-681 Warsaw, Poland
A. Turos
Affiliation:
Institute of Nuclear Studies, 00-681 Warsaw, Poland
Get access

Abstract

The formation of ohmic contacts to p-GaAs based on Au-Zn system comprising a TiN diffusion barrier has been investigated using 2 MeV He+ RBS and the specific contact resistance measurements. It has been proved that TiN films deposited by reactive RF bias magnetron sputtering serves two purposes. First it suppresses the arsenic evaporation and thus confines the reaction between AuZn and GaAs. Second, it prevents intermixing between p-GaAs/Au(Zn) ohmic contact and an overlayer of Au.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Remba, R.D., Suni, I., and Nicolet, M.-A., IEEE Electr. Dev. Lett. EDL-6, 437 (1985).Google Scholar
2. Sundgren, J.-E., Thin Solid Films 128, 21 (1985).Google Scholar
3. Tang, T.E., Wei, Ch., Haken, R.A., Holloway, T.C., Hite, L.R., Blacke, T.G.W., Proc. IEEE ED-34, 682 (1987).Google Scholar
4. Thompson, J.A., Remba, R.D., J. Electrochem. Soc. 3205 (1987).Google Scholar
5. Holleck, H., Surface Coatings and Technology 43/44, 245 (1990).Google Scholar
6. Shen, T.C., Gao, G.B., and Morkoq, H., J. Vac. Sci. Technol. B10, 2113 (1992).Google Scholar
7. Barcz, A., Kamifiska, E., and Piotrowska, A., Thin Solid Films 149, 251 (1987).Google Scholar
8. Piotrowska, A., Kamifiska, E., Guziewicz, M., Veresegyhazy, R., Mojzes, I., and Pecz, B., Acta Physica Polonica, Polish Scientific, Warsaw-Cracow, 80, 457 (1991).Google Scholar
9. Lin, X.W., Liliental-Weber, Z., Washburn, J., Piotrowska, A., and Kamifiska, E., Mat. Res. Soc. Symp. Proc. 260, 469 (1992).Google Scholar
10. Haynes, T.E., Chu, W.K., and Picraux, S.T., Appl. Phys. Lett. 50, 1071 (1987).Google Scholar
11. Piotrowska, A., Kamińska, E. K., Kwiatkowski, S. and Turos, A., J. Appl. Phys. 73 (9), (1993)Google Scholar
12. Kuphal, E., Solid-St. Electron. 24, 69 (1981).Google Scholar
13. Kaminska, E., Piotrowska, A., Barcz, A., Adamczewska, J., and Turos, A., Solid State Electron. 29, 279 (1986).Google Scholar
14. Kamifiska, E., Piotrowska, A., Zarecka, R., Barcz, A., Mizera, E. and Kwiatkowski, S., Acta Physica Polonica A 82, 853 (1992)Google Scholar
15. Doolittle, L.R., Nucl. Instr. and Meth. B15, 227 (1986).Google Scholar